Modeling Capacitances of a Vertical Rf Power Transistor
نویسندگان
چکیده
This paper addresses the device physics of a novel vertical power MOSFET through detailed TCAD simulation. The simulated I-V and C-V characteristics match well with the measured data. The bias dependence of electrical potential near the recess trench is identified as the cause of a sharp drop in output capacitance against drain voltage. Index Terms — power MOSFET, output capacitance, TCAD
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تاریخ انتشار 2011